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| DISCRETE SEMICONDUCTORS DATA SHEET BFS540 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 November 1992 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES * High power gain * Low noise figure * High transition frequency * Gold metallization ensures excellent reliability * SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for RF wideband amplifier applications such as satellite TV systems and RF portable communication equipment with signal frequencies up to 2 GHz. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM F PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure up to Ts = 80 C; note 1 IC = 40 mA; VCE = 8 V; Tj = 25 C IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 C IC = 10 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 C open base CONDITIONS open emitter MIN. - - - - 60 - - - TYP. - - - - 120 9 14 1.3 1 2 3 PINNING PIN base emitter collector 1 Top view BFS540 DESCRIPTION handbook, 2 columns Code: N4 3 2 MBC870 Fig.1 SOT323. MAX. 20 15 120 500 250 - - 1.7 UNIT V V mA mW GHz dB dB LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCES VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. November 1992 2 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature up to Ts = 80 C; note 1 RBE = 0 open collector CONDITIONS open emitter MIN. - - - - - -65 - MAX. 20 15 2.5 120 500 150 175 UNIT V V V mA mW C C Philips Semiconductors Product specification NPN 9 GHz wideband transistor THERMAL RESISTANCE SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 C, unless otherwise specified. SYMBOL ICBO hFE Ce Cc Cre fT GUM PARAMETER collector cut-off current DC current gain emitter capacitance collector capacitance feedback capacitance transition frequency CONDITIONS IE = 0; VCE = 8 V IC = 40 mA; VCE = 8 V IC = ic = 0; VEB = 0.5 V; f = 1 MHz IE = ie = 0; VCB = 8 V; f = 1 MHz IC = 0; VCB = 8 V; f = 1 MHz IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C MIN. - 60 - - - - - - 12 - - - - - TYP. - 120 2 0.9 0.6 9 14 8 13 1.3 1.9 2.1 21 34 PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 80 C; note 1 BFS540 THERMAL RESISTANCE 190 K/W MAX. 50 250 - - - - - - - 1.8 2.4 - - - UNIT nA pF pF pF GHz dB dB dB dB dB dB dBm dBm maximum unilateral power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; (note 1) Tamb = 25 C IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 C S212 F insertion power gain noise figure IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 C s = opt; IC = 10 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 C s = opt; IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 C s = opt; IC = 10 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 C PL1 ITO Notes output power at 1 dB gain compression third order intercept point Ic = 40 mA; VCE = 8 V; RL = 50 ; f = 900 MHz; Tamb = 25 C note 2 1. GUM is the maximum unilateral power gain, assuming S12 is zero and S 21 G UM = 10 log ------------------------------------------------------------- dB. 2 2 1 - S 11 1 - S 22 2. IC = 40 mA; VCE = 8 V; RL = 50 ; f = 900 MHz; Tamb = 25 C; fp = 900 MHz; fq = 902 MHz; measured at f(2p-q) = 898 MHz and at f(2q-p) = 904 MHz. 2 November 1992 3 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS540 MRC008 - 1 400 handbook, halfpage P tot (mW) 300 handbook, halfpage 200 MRC010 h FE 150 200 100 100 50 0 0 50 100 150 T ( o C) s 200 0 10-2 10-1 1 10 IC (mA) 102 VCE 10 V. VCE = 8 V; Tj = 25 C. Fig.2 Power derating curve. Fig.3 DC current gain as a function of collector current. handbook, halfpage 1 MRC001 Cre (pF) handbook, halfpage 12 MRC002 0.8 fT (GHz) V =8V CE 8 0.6 4V 0.4 4 0.2 0 0 2 4 6 8 10 12 VCB (V) 0 1 10 I C (mA) 102 IC = 0; f = 1 MHz. f = 1 GHz; Tamb = 25 C. Fig.4 Feedback capacitance as a function of collector-base voltage. Fig.5 Transition frequency as a function of collector current. November 1992 4 Philips Semiconductors Product specification NPN 9 GHz wideband transistor In Figs 6 to 9, GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. handbook, halfpage handbook, halfpage BFS540 15 MRC006 20 GUM (dB) 16 MRC007 gain (dB) VCE = 8 V 4V 12 10 G max GUM 8 5 4 0 0 0 0 10 20 30 40 50 IC (mA) 20 40 IC (mA) 60 VCE = 8 V; f = 2 GHz; Tamb = 25 C. f = 900 MHz; Tamb = 25 C. Fig.6 Maximum unilateral power gain as a function of collector current. Fig.7 Gain as a function of collector current. handbook, halfpage 50 MRC004 handbook, halfpage 50 MRC005 gain (dB) 40 G UM 30 MSG 20 G max 10 gain (dB) 40 G UM 30 MSG 20 10 G max 0 10-2 10-1 1 f (GHz) 10 0 10-2 10-1 1 f (GHz) 10 IC = 10 mA; VCE = 8 V; Tamb = 25 C. IC = 40 mA; VCE = 8 V; Tamb = 25 C. Fig.8 Gain as a function of frequency. Fig.9 Gain as a function of frequency. November 1992 5 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS540 handbook, halfpage 4 MRC009 handbook, halfpage 4 MRC003 F (dB) 3 f= 2 GHz 2 F (dB) 3 IC = 40 mA 10 mA 2 900 MHz 1 500 MHz 1 0 1 10 IC (mA) 102 0 10-1 1 f (GHz) 10 VCE = 8 V; Tamb = 25 C. VCE = 8 V; Tamb = 25 C. Fig.10 Minimum noise figure as a function of collector current. Fig.11 Minimum noise figure as a function of frequency. November 1992 6 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS540 handbook, full pagewidth 90 1.0 1 135 pot. unst. region 0.5 2 45 0.8 0.6 0.4 0.2 2 5 0 0 0.2 Fmin = 1. 3 dB OPT 0.2 0.5 F = 1.5 dB F = 2 dB 1 5 180 0 stability circle 0.2 F = 3 dB 5 -135 0.5 1 2 -45 MRC079 1.0 -90 IC = 10 mA; VCE = 8 V; f = 900 MHz; Zo = 50 . Fig.12 Noise circle. handbook, full pagewidth 90 1.0 1 135 0.5 2 45 0.8 0.6 0.4 0.2 2 5 0 0 0.2 F = 4 dB F = 3 dB F = 2.5 dB 0.5 1 5 180 0 MS 0.2 Gmax = 8.7 dB Fmin = 2. 1 dB G = 8 dB OPT 0.2 G = 7 dB G = 6 dB 5 -135 0.5 1 2 -45 MRC080 1.0 -90 IC = 10 mA; VCE = 8 V; f = 2 GHz; Zo = 50 . Fig.13 Noise circle. November 1992 7 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS540 handbook, full pagewidth 90 1.0 1 135 0.5 2 45 0.8 0.6 0.4 0.2 180 0 0.2 0.5 1 2 5 0 0 0.2 3 GHz 5 0.2 40 MHz 5 -135 0.5 1 2 -45 MRC062 1.0 -90 IC = 40 mA; VCE = 8 V; Zo = 50 . Fig.14 Common emitter input reflection coefficient (S11). handbook, full pagewidth 90 135 45 40 MHz 180 50 40 30 20 10 3 GHz 0 -135 -45 -90 IC = 40 mA; VCE = 8 V. MRC063 Fig.15 Common emitter forward transmission coefficient (S21). November 1992 8 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS540 handbook, full pagewidth 90 135 45 3 GHz 180 0.5 40 MHz 0.4 0.3 0.2 0.1 0 -135 -45 -90 IC = 40 mA; VCE = 8 V. MRC064 Fig.16 Common emitter reverse transmission coefficient (S12). handbook, full pagewidth 90 1.0 1 135 0.5 2 45 0.8 0.6 0.4 0.2 180 0 0.2 0.5 1 2 5 0 0 0.2 5 3 GHz 40 MHz 0.2 5 -135 0.5 1 2 -45 MRC065 1.0 -90 IC = 40 mA; VCE = 8 V; Zo = 50 . Fig.17 Common emitter output reflection coefficient (S22). November 1992 9 Philips Semiconductors Product specification NPN 9 GHz wideband transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads BFS540 SOT323 D B E A X y HE vMA 3 Q A A1 c 1 e1 e bp 2 wM B Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 OUTLINE VERSION SOT323 REFERENCES IEC JEDEC EIAJ SC-70 EUROPEAN PROJECTION ISSUE DATE 97-02-28 November 1992 10 Philips Semiconductors Product specification NPN 9 GHz wideband transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BFS540 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1992 11 |
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